Silicon wafer thickness variation measurements using the NIST infrared interferometer

  • Schmitz, T. L.; Davies, A.; Evans, C. J.; Parks, R. E.
  • Abstract: Decreasing depths of focus, coupled with increasing silicon wafer diameters, place greater restrictions on chucked wafer flatness in photolithography processes. A measurement device is described that measures thickness variation of double-sided polished wafers using an IR source and vidicon detector. Various possible instrument configurations are described with the focus on a setup that uses a collimated wavefront to produce interference fringes between the front and back surfaces of the plane parallel wafer. Experimental results are presented. These tests include (1) a drift test; (2) comparisons between measurements performed using different collimators and, subsequently, wavefronts; (3) an exploration of the impact of phase change on reflection due to the wafer clamping method; and (4) an intercomparison with thickness measurements recorded by a capacitance gage-based instrument and surface measurements obtained using a separate visible wavelength.

     

    Year:

    2003

    Journal:

    Opt. Eng.

    Volume:

    42

    Pages:

    2281-90

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